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马国坤

发布时间:2017-03-17      来源:       阅读次数:

马国坤,湖北大学,物理与电子科学学院,讲师。2010年6月毕业于四川大学高分子科学与工程学院获得学士学位;2015年1月于英国剑桥大学卡文迪许实验室(University of Cambridge, Cavendish Laboratory)进行联合培养;2016年12月毕业于电子科技大学微电子与固体电子学院获得博士学位,师从钟智勇教授。主要从事薄膜电子器件、新型存储器件、柔性电子器件学等方面研究。目前主要从事阻变存储材料与器件及其物理机制等研究工作。相关研究成果在ACS Appl. Mater. Interfaces, J Mater. Sci., IEEE EEE Trans. on Electron Devices等国际期刊发表SCI论文15篇,申请发明专利2项。

联系方式:

邮箱:guokunma@163.com

电话:15377649212

 

一、 主持或参加科研项目

(1)国家自然科学青年基金项目,51602036,旋磁钡铁氧体材料离子掺杂调控及低温烧结机理研究,2017/01-2019/12,20万,在研,参研

 

二、发表论文

(1)Guokun Ma, Xiaoli Tang*, Huaiwu Zhang, Zhiyong Zhong,Xia Li, Jie, Hua Su. Ultra-high ON/OFF ratio and multi-storage on NiO resistive switching Device. Journal of Materials Science, 2017, 52(1):238-246

(2)Guokun Ma, Xiaoli Tang*, Huaiwu Zhang, Zhiyong Zhong, Jie Li, Hua Su. Effects of stress on resistive switching property of the NiO RRAM device. Microelectronic Engineering, 2015, 139:43-47

(3)Guokun Ma, Xiaoli Tang*, Hua Su, Huaiwu Zhang, Jie Li, Zhiyong Zhong. Effects of electrode materials on bipolar and unipolar switching in NiO resistive switching device. Microelectronic Engineering, 2014, 129:17-20

(4)Guokun Ma, Xiaoli Tang*, Hua Su, Yuanxun Li, Huaiwu Zhang, Zhiyong Zhong. Effects of standard free energy on NiO bipolar resistive switching devices. IEEE Transactions on Electron Devices, 2014, 61(5):1237-1240

(5)Guokun Ma, Xiaoli Tang, Zhiyong Zhong, Huaiwu Zhang, Hua Su*. Effect of Ni3+concentration on the resistive switching behaviors of NiO memory devices. Microelectronic Engineering, 2013, 108:8-10

(6)Dainan Zhang,Guokun Ma*, Huaiwu Zhang, Xiaoli Tang, Zhiyong Zhong, Jie Li, Hua Su. The role of the inserted layer in resistive random access memory device. Materials Research Express, 2016, 3(7)

(7) Xia Li, Zhaoying Li, Liyun Wang,Guokun Ma, Fanlong Meng, Pritchard, Robyn H., Gill, Elisabeth L., Liu, Ye Liu, Huang Yan Yan Shery*. Low-Voltage Continuous Electrospinning Patterning. Acs Applied Materials & Interfaces, 2016, 8(47):32120-32131

(8)Dainan Zhang, Jie Li*, Huaiwu Zhang, Yang Wu, Qiang Li,Guokun Ma. Ba(CoTi)(1.22)Fe9.56O19ferrites prepared by sol-gel method and solid-state method techniques. Applied Physics A, 2016, 122(4):1-8

(9)Jie Li*, Huaiwu Zhang, Yinong Liu,Guokun Ma, Qiang Li. Low-temperature co-fired Ni-Ti co-substituted barium ferrites. Journal of Composite Materials,2016, 50(2):173-178

(10)Jie Li*, Huaiwu Zhang, Yinong Liu, Qiang Li,Guokun Ma, Hong Yang. The transformation behavior of M-type barium ferrites due to Co-Ti substitution. Journal of Materials Science: Materials in Electronics, 2015, 26(7):1-7.

(11)Jie Li*, Huaiwu Zhang, Yinong Liu, Yulong Liao,Guokun Ma, Hong Yang. Co-Ti co-substitution of M-type hexagonal barium ferrite. Materials Research Express, 2015, 2(4):046104

(12)Jie Li*, Huaiwu Zhang, Yinong Liu, Qiang Li,Guokun Ma, Hong Yang. Structural and magnetic properties of M-Ti (M=Ni or Zn) co-substituted M-type barium ferrite by a novel sintering process. Journal of Materials Science: Materials in Electronics, 2015, 26(2):1060-1065.

(13)Qi Wang, Huaiwu Zhang,Guokun Ma, Yulong Liao, Xiaoli Tang, Zhiyong Zhong*. Spectrum Gaps of Spin Waves Generated by Interference in a Uniform Nanostripe Waveguide. Scientific Reports, 2014, 4:5917

(14)Qi Wang, Huaiwu Zhang,Guokun Ma, Yulong Liao, Yun Zheng, Zhiyong Zhong*. Position dependent spin wave spectrum in nanostrip magnonic waveguides. Journal of Applied Physics. 2014,115(13)

(15)Qi Wang, Huaiwu Zhang,Guokun Ma, Xiaoli Tang, Yulong Liao, Zhiyong Zhong*. Magnonic band gaps in two-dimension magnonic crystals with diffuse interfaces. Journal of Applied Physics. 2014,115(11)

 

三、国家发明专利

(1)唐晓莉,马国坤,苏桦,钟智勇,张怀武,荆玉兰,一种多级阻变存储器单元及其制备方法,中国,201410133503.6

(2)李颉,张怀武,廖宇龙,李强,李元勋,马国坤,一种基于离子补偿制备单一纯相铁酸铋材料的方法,中国,201510387994.1。

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